STP5NK100Z, Транзистор полевой N-канальный 1KВ 3.5А 125Вт

Описание STP5NK100Z The STP5NK100Z is a SuperMESH3™ N-channel Power MOSFET features minimized gate charge. This new SuperMESH™ Power MOSFET is the result of further design improvements on ST's well-established strip based PowerMESH™ layout. In addition to significantly lower ON-resistance, the device offers superior dV/dt capability to ensure optimal performance even in the most demanding applications. The SuperMESH™ device further complements an already broad range of innovative high voltage MOSFETs, which includes the revolutionary MDmesh™ products. • Extremely high dV/dt capability • 100% Avalanche tested • Very good manufacturing repeatability EU RoHSCompliant with ExemptionECCN (US)EAR99Part StatusActiveHTS8541.29.00.95Product CategoryPower MOSFETConfigurationSingleProcess TechnologySuperMESHChannel ModeEnhancementChannel TypeNNumber of Elements per Chip1Maximum Drain Source Voltage (V)1000Maximum Gate Source Voltage (V)±30Maximum Continuous Drain Current (A)3.5Maximum Drain Source Resistance (mOhm)3700@10VTypical Gate Charge @ Vgs (nC)42@10VTypical Gate Charge @ 10V (nC)42Typical Input Capacitance @ Vds (pF)1154@25VMaximum Power Dissipation (mW)125000Typical Fall Time (ns)19Typical Rise Time (ns)7.7Typical Turn-Off Delay Time (ns)51.5Typical Turn-On Delay Time (ns)22.5Minimum Operating Temperature (°C)-55Maximum Operating Temperature (°C)150PackagingTubeAutomotiveNoPin Count3Supplier PackageTO-220Standard Package NameTO-220MilitaryNoMountingThrough HolePackage Height9.15(Max)Package Length10.4(Max)Package Width4.6(Max)PCB changed3TabTabLead ShapeThrough HoleВес, г2.8