SI9435BDY-T1-E3, Транзистор полевой P-канальный 30В 4.1A

Описание SI9435BDY-T1-E3 EU RoHSCompliantECCN (US)EAR99Part StatusNRNDHTS8541.29.00.95Product CategoryPower MOSFETProcess TechnologyTrenchFETConfigurationSingle Quad Drain Triple SourceChannel ModeEnhancementChannel TypePNumber of Elements per Chip1Maximum Drain Source Voltage (V)30Maximum Gate Source Voltage (V)±20Maximum Gate Threshold Voltage (V)3Maximum Continuous Drain Current (A)4.1Maximum Drain Source Resistance (mOhm)42@10VTypical Gate Charge @ Vgs (nC)16@10VTypical Gate Charge @ 10V (nC)16Maximum Power Dissipation (mW)2500Typical Fall Time (ns)30Typical Rise Time (ns)14Typical Turn-Off Delay Time (ns)42Typical Turn-On Delay Time (ns)14Minimum Operating Temperature (°C)-55Maximum Operating Temperature (°C)150PackagingTape and ReelAutomotiveNoPin Count8Supplier PackageSOIC NStandard Package NameSOPMilitaryNoMountingSurface MountPackage Height1.55(Max)Package Length5(Max)Package Width4(Max)PCB changed8Lead ShapeGull-wingВес, г0.15