SI2302CDS-T1-GE3, Транзистор полевой N-канальный 20В 2.6А 0.71Вт

Описание SI2302CDS-T1-GE3 The SI2302CDS-T1-GE3 is a 20V N-channel TrenchFET® power MOSFET for use in load switching for portable devices. • ±8V Gate to source voltage EU RoHSCompliantECCN (US)EAR99Part StatusActiveHTS8541.29.00.95Product CategoryPower MOSFETConfigurationSingleProcess TechnologyTrenchFETChannel ModeEnhancementChannel TypeNNumber of Elements per Chip1Maximum Drain Source Voltage (V)20Maximum Gate Source Voltage (V)±8Maximum Gate Threshold Voltage (V)0.85Maximum Continuous Drain Current (A)2.6Maximum Gate Source Leakage Current (nA)100Maximum IDSS (uA)0.1Maximum Drain Source Resistance (mOhm)57@4.5VTypical Gate Charge @ Vgs (nC)3.5@4.5VTypical Gate to Drain Charge (nC)0.45Typical Gate to Source Charge (nC)0.6Typical Reverse Recovery Charge (nC)2Typical Output Capacitance (pF)40Maximum Power Dissipation (mW)710Typical Fall Time (ns)7Typical Rise Time (ns)7Typical Turn-Off Delay Time (ns)30Typical Turn-On Delay Time (ns)8Minimum Operating Temperature (°C)-55Maximum Operating Temperature (°C)150PackagingTape and ReelAutomotiveNoPin Count3Supplier PackageSOT-23Standard Package NameSOT-23MilitaryNoMountingSurface MountPackage Height1.02(Max)Package Length3.04(Max)Package Width1.4(Max)PCB changed3Lead ShapeGull-wingВес, г0.05