MMBF170, Транзистор полевой N-канальный 60В 500мА

Описание MMBF170 The MMBF170 from Fairchild is a surface mount, N channel enhancement mode field effect transistors in SOT-23 package. This device features high cell density, DMOS technology which has been especially tailored to minimize the onstate resistance and provide superior switching performance and high avalanche energy strength. This device is suitable for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers and other switching applications. • High density cell design for low Rds(ON) • Voltage controlled small signal switch • Rugged and reliable • High saturation current capability • Drain to source voltage (Vds) of 60V • Gate to source voltage of ±20V • Continuous drain current (Id) of 500mA • Power dissipation (Pd) of 300mW • Low on state resistance of 1.2ohm at Vgs 10V • Operating temperature range -55°C to 150°C Структураn-каналМаксимальное напряжение сток-исток Uси,В60Максимальный ток сток-исток при 25 С Iси макс..А0.5Максимальное напряжение затвор-исток Uзи макс.,В±20Сопротивление канала в открытом состоянии Rси вкл. (Max) при Id, Rds (on)5 ом при 0.2a, 10вМаксимальная рассеиваемая мощность Pси макс..Вт0.83Корпусsot23Вес, г0.05