FDA59N25, Транзистор полевой N-канальный 250В 59А 390Вт

Описание FDA59N25 The FDA59N25 is an UniFET™ N-channel MOSFET produced using Fairchild Semiconductor's high voltage planar stripe and DMOS technology. It is tailored to reduce ON-state resistance and to provide better switching performance and higher avalanche energy strength. It is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. • 63nC Typical low gate charge • 70pF Typical low Crss • 100% Avalanche tested Base Product NumberFDA59 ->Current - Continuous Drain (Id) @ 25В°C59A (Tc)Drain to Source Voltage (Vdss)250VDrive Voltage (Max Rds On, Min Rds On)10VECCNEAR99FET TypeN-ChannelGate Charge (Qg) (Max) @ Vgs82nC @ 10VHTSUS8541.29.0095Input Capacitance (Ciss) (Max) @ Vds4020pF @ 25VMoisture Sensitivity Level (MSL)1 (Unlimited)Mounting TypeThrough HoleOperating Temperature-55В°C ~ 150В°C (TJ)PackageTubePackage / CaseTO-3P-3, SC-65-3Power Dissipation (Max)392W (Tc)Rds On (Max) @ Id, Vgs49mOhm @ 29.5A, 10VREACH StatusREACH UnaffectedRoHS StatusROHS3 CompliantSeriesUniFETв„ў ->Supplier Device PackageTO-3PNTechnologyMOSFET (Metal Oxide)Vgs (Max)В±30VVgs(th) (Max) @ Id5V @ 250ВµAВес, г6.5