SST39VF800A-70-4C-EKE, Флеш память, 8 Мбит, 512К x 16бит, 14 МГц, Параллельный, TSOP, 48 вывод(-ов): от компании Electrony

Покупая изделие: sst39vf800a-70-4c-eke, флеш память, 8 мбит, 512к x 16бит, 14 мгц, параллельный, tsop, 48 вывод(-ов) наши специалисты помогут с выбором нужных сопутствующих товаров из каталога: Microchip . Мы проконсультируем вас по всем техническим деталям и в случае необходимости подберем аналогичный товар: ETM или похожий товар производителя microchip. Помощь в подборе материалов от экспертов в своей области, а также оперативная доставка и сниженные цены на весь товар.

SST39VF800A-70-4C-EKE, Флеш память, 8 Мбит, 512К x 16бит, 14 МГц, Параллельный, TSOP, 48 вывод(-ов)

The SST39VF800A-70-4C-EKE is a 8MB CMOS multi-purpose Flash Memory manufactured with SST proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The device writes with a 3 to 3.6V power supply. This device conforms to JEDEC standard pinouts for x16 memories. Featuring high-performance word-program, the device provides a typical word-program time of 14µsec. The device uses toggle bit or data# polling to detect the completion of the program or erase operation. To protect against inadvertent write, it has on-chip hardware and software data protection schemes. Designed, manufactured and tested for a wide spectrum of applications, this device is offered with a guaranteed typical endurance of 100000 cycles. Data retention is rated at greater than 100 years. • Superior reliability • Low power consumption • Sector-erase capability - uniform 2K word sectors • Block-erase capability - Uniform 32K word blocks • Fast read access time - 55ns • Latched address and data • Fast erase and word-program • Automatic write timing - internal VPP generation • End-of-write detection • CMOS I/O compatibility Полупроводники - Микросхемы\Память\FLASH